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June 2003
AO3413 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -3 A RDS(ON) < 97m (VGS = -4.5V) RDS(ON) < 130m (VGS = -2.5V) RDS(ON) < 190m (VGS = -1.8V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 8 -3 -2.4 -15 1.4 0.9 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 70 100 63
Max 90 125 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3413
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A TJ=125C VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A -0.3 -15 -0.55 81 111 108 4 146 7 -0.78 Min -20 -1 -5 100 -1 97 135 130 190 -1 -2 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
gFS VSD IS
Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
540 72 49 12 6.1 0.6 1.6 10
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, ID=-3A
VGS=-4.5V, VDS=-10V, RL=3.3, RGEN=3
12 44 22 21 7.5
IF=-3A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 -2.5V 6 VDS=-5V
5 VGS=-1.5V
2
125C 25C
0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5
0 0 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2
200 VGS=-1.8V RDS(ON) (m) 150 VGS=-2.5V 100 Normalized On-Resistance
1.8 VGS=-2.5V 1.6 1.4 1.2 1 0.8 0 2 4 6 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 ID=-4A VGS=-1.8V VGS=-4.5V
VGS=-4.5V
50
200
150 RDS(ON) (m) -IS (A)
1E-01 1E-02 1E-03 1E-04 1E-05
125C 25C
125C 100 25C
50 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3A Capacitance (pF) 800
600
Ciss
400
200
Crss Coss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 0.1s 10ms 100s 10s Power (W)
20
TJ(Max)=150C TA=25C
15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
SOT-23 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
A A1 A2 b C D E E1 e e1 L 1
MIN 1.00 0.00 1.00 0.35 0.10 2.80 2.60 1.40 --- --- 0.40 1
NOM --- --- 1.10 0.40 0.15 2.90 2.80 1.60 0.95 BSC 1.90 BSC --- 5
MAX 1.25 0.10 1.15 0.50 0.25 3.04 2.95 1.80 --- --- 0.60 8
PACKAGE MARKING DESCRIPTION
SEATING PLANE
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
GAUGE PLANE
RECOMMENDATION OF LAND PATTERN
SOT-23 PART NO. CODE
PNDLN
PART NO. AO3411
CODE AB
NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE.
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
SOT-23 Reel
SOT-23 Tape
Leader / Trailer & Orientation

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